Semiconductor device including gate channel having adjusted threshold voltage

ABSTRACT

A semiconductor device includes at least one first semiconductor fin formed on an nFET region of a semiconductor device and at least one second semiconductor fin formed on a pFET region. The at least one first semiconductor fin has an nFET channel region interposed between a pair of nFET source/drain regions. The at least one second semiconductor fin has a pFET channel region interposed between a pair of pFET source/drain regions. The an epitaxial liner is formed on only the pFET channel region of the at least one second semiconductor fin such that a first threshold voltage of the nFET channel region is different than a second threshold voltage of the pFET channel.

BACKGROUND

The present invention relates generally to semiconductor devices, andmore specifically, to a semiconductor device including a gate channelhaving an adjusted threshold voltage.

Semiconductor devices, such as complimentary metal gate oxidesemiconductor (CMOS) devices for example, include silicon germanium(SiGe) to adjust the threshold voltage (Vt). Regarding planar devices,the SiGe channel is epitaxially grown on the bulk or SOI siliconsubstrate and is patterned during gate or spacer definition. Thejunctions are then typically formed using in-situ doped SiGe insource/drain (S/D) and extension regions. Implanting a p-type dopant(e.g., boron) in the epitaxially grown SiGe results in very lowdiffusion of the species and leads to under lapped high-resistanceextension regions. With respect to trigate/finFET devices, epitaxiallygrowing SiGe entirely on the Si fins, including on upper surfaces of thefins in the S/D regions, leaves the entire core of the Si finsrelatively undoped and results in high-access resistance.

SUMMARY

According to at least one embodiment, a method of forming asemiconductor device includes forming at least one first semiconductorfin on an nFET region of a semiconductor device and at least one secondsemiconductor fin on a pFET region of the semiconductor device. The atleast one first semiconductor fin has an nFET channel region interposedbetween a pair of nFET source/drain regions. The at least one secondsemiconductor fin has a pFET channel region interposed between a pair ofpFET source/drain regions. The method further includes forming anepitaxial liner on only the pFET channel region of the at least onesecond semiconductor fin such that a first threshold voltage of the nFETchannel region is different than a second threshold voltage of the pFETchannel.

According to another exemplary embodiment, a semiconductor devicecomprises a semiconductor substrate including an nFET region and a pFETregion separately located from the nFET region. At least one firstsemiconductor fin is formed on the nFET region. The at least one firstsemiconductor fin has an nFET channel region interposed between a pairof nFET source/drain regions. At least one second semiconductor fin isformed on the pFET region. The at least one second semiconductor fin hasa pFET channel region interposed between a pair of pFET source/drainregions. The semiconductor device further includes an epitaxial linerformed only on the pFET channel region such that a first thresholdvoltage of the nFET channel region is different than a second thresholdvoltage of the pFET channel.

Additional features are realized through the techniques of the presentinvention. Other embodiments are described in detail herein and areconsidered a part of the claimed invention. For a better understandingof the invention with the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. FIGS. 1-14 are a series of views illustrating amethod of forming a finFET device according to embodiments of thedisclosure, in which:

FIG. 1 is a cross-sectional view in a first orientation illustrating asemiconductor-on-insulator (SOI) starting substrate according to anexemplary embodiment;

FIG. 2 illustrates the substrate of FIG. 1 after patterning an activesemiconductor layer to form a plurality of semiconductor fins on aninsulator layer;

FIG. 3A illustrates the substrate of FIG. 2 following formation of adummy gate stack that wraps around an outer surface of the semiconductorfins to define a channel region;

FIG. 3B is a cross-sectional view in a second orientation taken alongthe lines A-A′ of FIG. 3A;

FIG. 4A illustrates the substrate of FIGS. 3A-3B in the firstorientation following formation spacers on sidewalls of the dummy gatestack;

FIG. 4B is a cross-sectional view of the substrate illustrated in FIG.4A according to the second orientation;

FIG. 5A illustrates the substrate of FIGS. 4A-4B in the firstorientation after selectively growing a first epitaxial material onsource/drain regions of the semiconductor fins formed in a pFET regionof the substrate according to a first embodiment;

FIG. 5B is a cross-sectional view of the substrate illustrated in FIG.5A according to the second orientation;

FIG. 6A illustrates the substrate of FIGS. 4A-4B in the firstorientation after selectively growing a first epitaxial material on thesemiconductor fins formed in a pFET region of the substrate andannealing the substrate to diffuse ions of the epitaxial material intothe fin to form diffused extension regions according to a secondembodiment;

FIG. 6B is a cross-sectional view of the substrate illustrated FIG. 6Aaccording to the second orientation;

FIG. 7A illustrates the substrate of FIGS. 5A-5B in the firstorientation after growing a second epitaxial material on thesource/drain regions of the semiconductor fins formed in a nFET regionof the substrate;

FIG. 7B is a cross-sectional view taken along line B-B′ illustrating thesubstrate of FIG. 7A according to the second orientation;

FIG. 8A illustrates the substrate of FIGS. 7A-7B following deposition ofa dielectric layer that covers the semiconductor fins and the dummy gatestack in the nFET region and the pFET region;

FIG. 8B illustrates the substrate of FIG. 8A according to the secondorientation;

FIG. 9A illustrates the substrate of FIGS. 8A-8B following a replacementmetal gate process that removes the dummy gate stack and exposes aportion of the semiconductor fins in the channel region of the pFETregion;

FIG. 9B illustrates the substrate of FIG. 9A according to the secondorientation;

FIG. 9C is a third orientation of the substrate shown in FIGS. 9A-9Billustrating a cross-section of the semiconductor fins taken along lineC-C′;

FIG. 10A illustrates the substrate of FIGS. 9A-9C after partiallyetching the exposed portion of the semiconductor fins in the channelregion;

FIG. 10B illustrates the substrate of FIG. 10A according to the secondorientation;

FIG. 10C illustrates the cross-section of the semiconductor fins shownin FIGS. 10A-10B according to the third orientation;

FIG. 11A illustrates the substrate of FIGS. 10A-10C in the firstorientation after growing an epitaxial liner on the exposed portion ofthe semiconductor fins in the channel region to form an epi-linedchannel region in the pFET region;

FIG. 11B illustrates the substrate of FIG. 11A according to the secondorientation;

FIG. 11C illustrates the cross-section of the semiconductor fins shownin FIGS. 11A-11B according to the third orientation;

FIG. 12 illustrates the substrate of FIGS. 11A-11C in the secondorientation following formation of a metal gate stack that wraps aroundthe epi-lined channel region; and

FIG. 13 illustrates the substrate of FIG. 12 in the second orientationfollowing formation of contact structures in the source/drain regions.

FIG. 14 is a flow diagram illustrating a method of fabricating asemiconductor device according to an exemplary embodiment.

DETAILED DESCRIPTION

With reference now to FIG. 1, a semiconductor-on-insulator (SOI)starting substrate 100 having one or more nFET regions 102 and one ormore pFET regions 104 is generally shown. The SOI substrate 100 extendsalong a first axis (e.g., an X-axis) to define a width, a second axis(e.g., a Y-axis) to define a height and a third axis (e.g., Z-axis) todefine a length. The nFET region 102 and the pFET region 104 form a CMOSdevice as understood by those ordinarily skilled in the art. It isappreciated that although a SOI substrate 100 is discussed goingforward, the starting substrate is formed as a bulk semiconductorsubstrate. In the case of a bulk substrate, one or more doped wells areformed in regions of the substrate. The regions are doped with n-typeatoms to form one or more pFET region, or p-type atoms to form one ormore respective n regions as understood by those ordinarily skilled inthe art.

The SOI substrate 100 includes a bulk substrate layer 106, an insulatorlayer 108, and an active semiconductor layer 110. The insulator layer108 is formed as a buried oxide (BOX) layer 108, for example, that isinterposed between the bulk substrate layer 106 and the activesemiconductor layer 110 to form the SOI substrate 100 as understood bythose ordinarily skilled in the art. The BOX layer 108 is formed fromvarious materials including, but not limited to, silicon dioxide (SiO₂).The bulk substrate layer 106 and the active semiconductor layer 110 isformed from various semiconductor materials including, but not limitedto silicon (Si).

Referring to FIG. 2, the active semiconductor layer 110 is patternedaccording to a well-known sidewall image transfer (SIT) patterningprocess, for example. Accordingly, a plurality spaced regions 112 areformed in the active semiconductor layer 110. The spaced regions 112define a plurality of semiconductor fins 114 that are formed on the BOXlayer 108. The plurality of semiconductor fins 114 includes one or moren-type fins 114 formed in the nFET regions 102 and one or more pFET fins114 formed in the pFET region 104. Each of the fins 114 extends alongthe X-axis to define a respective first fin width (w_(FIN)), and extendsfrom the BOX layer 108 along the Y-axis to define a fin height(h_(Fin)).

Turning to FIGS. 3A-3B, a dummy gate stack 116 is formed atop the BOXlayer 108 and extends along the X-axis using various gate stackformation processes understood by those ordinarily skilled in the art.The dummy gate stack 116 includes a hardmask layer 118 formed atop adummy gate element 120. The hardmask layer 118 is formed from, forexample, silicon nitride (SN) and the dummy gate element 120 is formedfrom, for example, polysilicon (PC). The dummy gate element 120 wrapsaround a portion of each semiconductor fin 114 to define a gate channelregion that extends along the Z-axis to define a channel length(l_(CHANNEL)). The length of gate channel region ultimately defines arespective channel region of the n-type fins 114 (i.e., an nFET channelregion) and/or the p-type fins 114 (i.e., a PFET channel region).

Referring to FIGS. 4A-4B, gate spacers 122 are formed on sidewalls ofthe dummy gate stack 116. The gate spacers 122 may comprise nitride, andformed via a technique such as deposition of a conformal nitride layer.Sacrificial layers of the conformal nitride layer are removed such thatthe remaining nitride material forms the gate spacers 122 as understoodby those ordinarily skilled in the art. In this regard, the hardmasklayer 118 protects the underlying dummy gate element 120 when etchingthe conformal spacer layer to form the gate spacers 122. The gatespacers 122 are formed from various materials including, but not limitedto, SiN.

Turning now to FIGS. 5A-5B, a first masking layer 124 is deposited onthe BOX layer 108 such that the semiconductor fins 114 and the dummygate stack 116 in the nFET region 102 and the pFET region 104 arecovered. The first masking layer 124 is then selectively patterned toexpose the pFET region 104 while covering the nFET region 102. It isappreciated that the first masking layer 124 is instead patterned toexpose the nFET region 102 while the pFET region 104 remains covered.

Still referring to FIGS. 5A-5B, a first epitaxial material 126 such asSiGe, for example, is grown on the exposed surfaces of the semiconductorfins 114 formed in the exposed pFET region 104, for example. The firstepitaxial material 126 is grown using various epitaxial growth processesunderstood by those ordinarily skilled in the art. In addition, thefirst epitaxial material 126 is also in-situ doped with p-type atomssuch as boron, for example, as understood by those ordinarily skilled inthe art. According to at least one embodiment, the first epitaxialmaterial 126 covers opposing side portions of each semiconductor fin 114located adjacent to opposing sides of the dummy gate stack 116. Theepitaxial material 126 and extends between a first end 128 of the fin114 and a first spacer 122 of a first side of the fin 114 to define afirst source/drain (S/D) region 130, and between a second end 132 of thefin 114 and a second spacer 122 of the fin 114 to define a second S/Dregion 134. In this regard, a middle portion of the fins 114 locatedbeneath the dummy gate element 120 and the gate spacers 122 exclude theepitaxial material 126. The S/D regions corresponding to thesemiconductor fins 114 located in the nFET region 102 are referred to asnFET S/D region, and the S/D regions corresponding to the semiconductorfins 114 located in the pFET region 104 are referred to as the pFET S/Dregion.

Referring to FIGS. 6A-6B, another exemplary embodiment is illustratedwhere extension regions 133 are formed in portions of the fins 114 thatare covered by the gate spacers 122. More specifically, afterselectively growing a first epitaxial material 126 on the semiconductorfins 114 formed in a pFET region 104 as described in detail above, theSOI substrate 100 undergoes a high-temperature annealing operation. Thetemperature ranges, for example, from approximately 900 degrees Celsiusto approximately 1300 degrees Celsius. The annealing process diffusesthe doped ions of the first epitaxial material 126 into the portions ofthe fin 114 located beneath the gate spacers 122 to form the extensionregions 133 as illustrated in FIG. 6B. It is appreciated that theaforementioned annealing process is not limited to this stage of theprocess flow.

Referring now to FIGS. 7A-7B, a second masking layer 124′ is depositedon the BOX layer 108, which covers the semiconductor fins 114 and thedummy gate stack 116 in the nFET region 102 and the pFET region 104. Itis appreciated that the first masking layer 124 is stripped beforedepositing the second masking layer 124′. The second masking layer 124′is then selectively patterned to expose the nFET region 102 whilecovering the pFET region 104.

Still referring to FIGS. 7A-7B, a second epitaxial material 135 is grownon the exposed surfaces of the semiconductor fins 114 formed in theexposed nFET region 102, for example. The second epitaxial material 135is grown using various epitaxial growth processes understood by thoseordinarily skilled in the art. In addition, the second epitaxialmaterial 135 such as silicon, for example, is also in-situ doped withn-type atoms such arsenic or phosphorus, for example, as understood bythose ordinarily skilled in the art. According to at least oneembodiment, the second epitaxial material 135 covers each semiconductorfin 114 and extends between a first end 128 of the fin 114 and a firstspacer 122 to define a first S/D region 130, and between a second end132 of the fin 114 and a second spacer to define a second S/D region134. In this regard, the portions of the fin 114 located beneath thedummy gate element 120 and the gate spacers 122 exclude the secondepitaxial material 135. An optional thermal annealing process isperformed to diffuse the dopant atoms of the second epitaxial material135 into the portions of the fins located beneath the gate spacers 122to form extension regions as described in detail above with respect toFIGS. 5A-5B.

Turning to FIGS. 8A-8B, the first and/or second masking layers 124/124′are stripped away, and a dielectric layer 136 is deposited on the BOXlayer 108 such that the S/D regions of the fins 114 and the gate stack116 in both the nFET region 102 and the pFET region 104 are covered. Thedielectric layer 136 is formed from various materials including, but notlimited to, SiO₂. The dielectric layer 136 is planarized according to achemical-mechanical planarization (CMP) process as understood by thoseordinarily skilled in the art. Accordingly, the upper surface of thehardmask layer 118 is formed flush with the upper surface of thedielectric layer 136 as further illustrated in FIG. 8B.

Referring to FIGS. 9A-9C, a third masking layer 124′″ is deposited onthe dielectric layer 136. The third masking layer 124′″ is thenselectively patterned to expose the pFET region 104 while covering thenFET region 102. It is appreciated that the masking layer 124′″ isinstead patterned to expose the nFET region 102 while the pFET region104 remains covered.

After exposing the pFET region 102, for example, the hardmask layer 118is etched away and the dummy gate element 120 is removed from the gatestack 116 according to a replacement metal gate (RMG) process asunderstood by those ordinarily skilled in the art. Accordingly, a gateopening 138 is formed in each gate stack 116 that exposes the middleportion 114′ of a respective semiconductor fin 114 (i.e., an exposed finportion 114′). The exposed fin portions 114′ exclude the first epitaxialmaterial 126 or the second epitaxial material 135 since this portion wascovered by the dummy gate element 120 during the epitaxial growthprocesses described above. As illustrated in FIG. 9C, each exposed finportion 114′ has an initial fin width (w_(FIN1)) and an initial finheight (h_(FIN1)).

Turning now FIGS. 10A-10C, the exposed fin portions 114′ are selectivelyetched with respect to the BOX layer 108, the gate spacers 122, and thedielectric layer 136. According to at least one exemplary embodiment, aselective dry etching process is used, for example, to etch the exposedfin portions 114′. For example, the BOX layer 108, the gate spacers 122and the dielectric layer 136 is formed from an oxide material, and ahydrochloric (HCl) gas, which is selective to oxide materials, isapplied to the exposed fin portions 114′. According to at least oneexemplary embodiment, each side of the exposed fin portions 114′ isetched to reduce the width and/or height of the exposed fin portions114′. In this regard, a new fin width (w_(FIN2)) and new fin height(h_(FIN2)) is formed as illustrated in FIG. 10C. The surfaces of theexposed fin portions 114′ are reduced, for example, by approximately 2nanometers (nm) to approximately 3 nm.

Referring now to FIGS. 11A-11C, an epitaxial liner 140 is grown on theetched surfaces of one or more of the exposed fin portions 114′. Thecombination of the epitaxial liner 140 and the underlying fins increaseselectron hole-mobility through the channel region of the fin portions114′. The epitaxial liner 140 is formed, for example, by epitaxiallygrowing silicon germanium (SiGe) on the etched surfaces of the exposedfin portions 114′. The germanium (Ge) concentration in the SiGe can berange from approximately 10% to approximately 99%, for example.According to at least one embodiment, the germanium (Ge) concentrationin the SiGe is range from 20% to 90%.

The width of the epitaxial liner 140 equals or is approximately equal tothe amount of material previously etched away from the surfaces of theexposed fin portions 114′. In this regard, combination of the etchedexposed fin portions 114′ and the epitaxial liner 140 defines a combinedfin width (w_(FIN3)) that is equal to or approximately equal to theinitial fin width (w_(FIN1)), and a combined fin height (h_(FIN3)) thatis equal to or approximately equal to the initial fin height (h_(FIN1))(see FIGS. 11B-11C).

The combination of the epitaxial liner 140 and a respective etchedexposed fin portion 114′ forms an epitaxial-lined channel region 142that modulates the threshold voltage (Vt) of the respective fin 114. Forexample, the epitaxial-lined channel region 142 is formed having a Vt ofapproximately −0.3 V for approximately 25% SiGe, and approximately −0.4V for approximately 50% SiGe. According to at least one embodiment, theepitaxial-lined channel region 142 (i.e., a SiGe liner formed on anetched portion of the semiconductor fin) is formed in only the pFETregion 104. The channel regions of the nFET region, however, consistonly of Si. That is, the nFET region excludes the SiGe liner from etchedportions of the semiconductor fin (e.g., the middle portion of the fin).In this regard, the pFET region 104 is formed having a first Vt and thenFET region 102 is formed having a different second Vt.

According to another embodiment, the substrate may have multiple pFETregions. Each pFET region has a different concentration of SiGe withrespect to one another. For example, a first pFET may include a firstepitaxial liner 140 having a 75% concentration of SiGe, a second pFETmay include a second epitaxial liner 140 having a 50% concentration ofSiGe, a third pFET region may include a third epitaxial liner 140 havinga 25% concentration of SiGe, and a fourth pFET region may exclude a SiGeliner 140 (i.e., 0% concentration of SiGe). Accordingly, each pFET has adifferent Vt with respect to one another.

Turning now to FIG. 12, a metal gate stack 144 that wraps around theepitaxial-lined channel region 142 is formed in the gate opening 138.The metal gate stack 144 includes a gate dielectric layer 146 and ametal gate element 148. The gate dielectric layer 146 is formed bydepositing a conformal dielectric layer on the sidewalls of the gatespacers 122 and on the surfaces of the epitaxial-lined channel region142. The gate dielectric layer 146 is formed from various materialsincluding, but not limited to, an oxide, nitride, and/or oxynitridematerial. In one example, the gate dielectric layer 146 is formed from ahigh k material having a dielectric constant greater than silicondioxide. Exemplary high-k dielectrics include, but are not limited to,HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y),ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), a silicatethereof, and an alloy thereof. Each value of x ranges from 0.5 to 3, forexample, and each value of y ranges from 0 to 2, for example. In someembodiments, the gate dielectric layer 146 is formed as a multilayeredgate dielectric structure comprising different gate dielectricmaterials, including but not limited to, silicon dioxide, and a high-kgate dielectric material.

Thereafter, the remaining gate opening 138 is filled with a metalmaterial to form the metal gate element 148. Any residual metal materialand/or high-k material formed on an upper surface of the gate spacers122 and/or dielectric layer 136 are planarized using a CMP process suchthat the metal gate stack 144 is formed and the high-k layer 146interposed between the gate spacers 122 and the metal gate element 148.Although not illustrated, it is appreciated that the metal gate stack144 also includes one or more work function metal (WFM) layers tofurther adjust the threshold voltage as understood by those ordinarilyskilled in the art.

Referring to FIG. 13, an electrically conductive contact structure 150is formed at each S/D region 130, 134 of the pFET region 104. Eachcontact structure 150 includes a silicide portion 152 and anelectrically conductive via 154. The silicide portion 152 is embedded inthe dielectric layer 136 and is formed on the first epitaxial material126. Various materials are used to form the silicide portion 152including, but not limited to, CoSi₂ and NiSi. The via 154 is formedthrough the dielectric layer 136 such that a first end 156 contacts thesilicide portion 152 and an opposite end 158 is exposed at an uppersurface of the dielectric layer 136. Various electrically conductivematerials are used to form the vias 154 as understood by thoseordinarily skilled in the art. Although formation of conductive contactstructure 150 in the pFET region is shown, it appreciated that aconductive contact structure 150 is formed in the nFET region in asimilar manner as described above.

Referring now to FIG. 14, a flow diagram illustrates a method offabricating a semiconductor device including an epitaxial-lined channelregion that adjusts a threshold voltage according to an exemplaryembodiment. The method begins at operation 1400, and at operation 1402 asemiconductor substrate including an nFET region and a pFET region isformed. At operation 1404, a plurality of semiconductor fins is formedon an insulator layer of the semiconductor substrate. At operation 1406,a dummy gate stack that wraps around a portion of the fins is formed onthe insulator layer. At operation 1408, spacers are formed on sidewallsof the dummy gate stack. At operation 1410, a first epitaxial materialis grown at S/D regions of the semiconductor fins formed in the pFETregion. At operation 1412, a second epitaxial material is grown at S/Dregions of the semiconductor fins formed in the nFET region. Adielectric layer is formed on the insulator layer that covers thesemiconductor fins and the dummy gate stack in the nFET and pFET regionsat operation 1414. At operation 1416, a dummy gate element of the dummygate stack is removed to form a gate opening that exposes a portion ofthe semiconductor fin. The exposed portion of the semiconductor fin isetched at operation 1418. At operation 1420, an epitaxial liner is grownon the etched portion of the semiconductor fin to form anepitaxial-lined channel region. At operation 1422, a metal gate stack isformed that wraps around the epitaxial liner of the epitaxial-linedchannel region, and the method ends at operation 1424.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of onemore other features, integers, steps, operations, element components,and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the inventive teachings and the practical application, andto enable others of ordinary skill in the art to understand theinvention for various embodiments with various modifications as aresuited to the particular use contemplated.

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the operations described thereinwithout departing from the spirit of the invention. For instance, theoperations may be performed in a differing order or operations may beadded, deleted or modified. All of these variations are considered apart of the claimed invention.

While various embodiments have been described, it will be understoodthat those skilled in the art, both now and in the future, may makevarious modifications which fall within the scope of the followingclaims. These claims should be construed to maintain the properprotection for the invention first described.

1.-11. (canceled)
 12. A semiconductor device comprising: a semiconductorsubstrate including an nFET portion and a pFET portion separatelylocated from the nFET portion; at least one first semiconductor finformed on the nFET portion, the at least one first semiconductor finhaving an nFET channel region interposed between a pair of nFETsource/drain regions; and at least one second semiconductor fin formedon the pFET portion, the at least one second semiconductor fin having apFET channel region interposed between a pair of pFET source/drainregions, pFET channel region including an etched portion of the at leastone second semiconductor fin, and wherein the etched portion has a firstthickness that is less than a second thickness of the at least one firstsemiconductor fin; and an epitaxial liner formed only on the pFETchannel region such that a first threshold voltage of the nFET channelregion is different than a second threshold voltage of the pFET channelregion wherein the epitaxial liner is formed on the etched portion, thecombination of the etched portion and the epitaxial liner defining athird thickness that is equal to the second thickness of the at leastone first semiconductor fin.
 13. The semiconductor device of claim 12,wherein the nFET source/drain regions and the pFET source/drain regionseach exclude the epitaxial liner.
 14. The semiconductor device of claim13, wherein the epitaxial liner comprises silicon germanium (SiGe)formed in a middle portion of the at least one second semiconductor finformed on the pFET portion, and the middle region of that at least onesecond semiconductor fin formed on the nFET portion is formed from onlySi.
 15. The semiconductor device of claim 14, wherein the at least onesecond semiconductor fin formed on the pFET portion includes a middleportion defined by the SiGe channel region and side portions consistingof Si formed at opposing sides of the middle portion, and wherein the atleast one first semiconductor fin formed on the nFET portion includes aSi middle portion consisting of only Si and side portions consisting ofSi formed at opposing sides of the Si middle portion.
 16. Thesemiconductor device of claim 15, wherein the second threshold voltageis less than the first threshold voltage.
 17. (canceled)
 18. (canceled)19. The method of claim 12, wherein the semiconductor substrate hasmultiple pFET regions, each pFET channel region having a differentconcentration of SiGe with respect to one another to form differentrespective threshold voltages.
 20. The semiconductor device of claim 19,wherein the multiple pFET regions includes the first pFET region havinga SiGe concentration of 25%, the second pFET region having a SiGeconcentration of 50%, and a third pFET region having a SiGeconcentration of 75%, wherein a third threshold voltage of the thirdpFET region is less than the first and second threshold voltages.